Silicate layer formation at HfO2/SiO2/Si interface determined by x-ray photoelectron spectroscopy and infrared spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2361161
Reference25 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
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