Spectroscopic ellipsometry characterization of nitrogen-incorporated HfO2 gate dielectrics grown by radio-frequency reactive sputtering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1927716
Reference23 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Thermodynamic stability of binary oxides in contact with silicon
3. Nitrogen concentration effects and performance improvement of MOSFETs using thermally stable HfO/sub x/N/sub y/ gate dielectrics
4. Effect of nitrogen containing plasmas on interface stability of hafnium oxide ultrathin films on Si(100)
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