Nitrogen concentration effects and performance improvement of MOSFETs using thermally stable HfO/sub x/N/sub y/ gate dielectrics
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/8330/25999/01175974.pdf?arnumber=1175974
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1. Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfOxNy) Thin Films;Materials;2023-03-22
2. Replacement Gate High-k/Metal Gate nMOSFETs Using a Self-Aligned Halo-Compensated Channel Implant;IEEE Transactions on Electron Devices;2020-06
3. Technology and optimization of hafnium oxynitride (HfOxNy) thin-films formed by pulsed-DC reactive magnetron sputtering for MIS devices;Microelectronic Engineering;2020-05
4. Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol–gel-processed high-k HfAlOx gate dielectrics;Ceramics International;2017-02
5. Baking-temperature-modulated optical and electrical properties of HfTiOx gate dielectrics via sol-gel method;Journal of Alloys and Compounds;2016-12
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