Investigation of the metal-to-insulator transition of N-doped VO2(M1) thin films-Reference-Cited by-同舟云学术

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Investigation of the metal-to-insulator transition of N-doped VO2(M1) thin films

Published:2021-07 Issue: Volume:554 Page:149661
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chouteau Simon^ORCID,Mansouri Sabeur,Mohamedou Mohamed Lemine Ould Ne,Chaillou Jérémie,Suleiman Aminat Oyiza,Drogoff Boris Le,Chaker Mohamed

Funder

Natural Sciences and Engineering Research Council of Canada

Canada Research Chairs

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference44 articles.

1. F. J. Morin, “Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature,” Physical Review Letters, vol. 3, pp. 34-36, 7 1959.

2. C. N. Berglund and H. J. Guggenheim, “Electronic Properties of VO2near the Semiconductor-Metal Transition,” Physical Review, vol. 185, pp. 1022-1033, 9 1969.

3. N. Émond, A. Hendaoui, A. Ibrahim, I. Al-Naib, T. Ozaki and M. Chaker, “Transmission of reactive pulsed laser deposited VO2 films in the THz domain,” Applied Surface Science, vol. 379, pp. 377-383, 8 2016.

4. D. Ruzmetov, G. Gopalakrishnan, J. Deng, V. Narayanamurti and S. Ramanathan, “Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions,” Journal of Applied Physics, vol. 106, p. 083702, 10 2009.

5. S. Lysenko, A. J. Rua, V. Vikhnin, J. Jimenez, F. Fernandez and H. Liu, “Light-induced ultrafast phase transitions in VO2 thin film,” Applied Surface Science, vol. 252, pp. 5512-5515, 5 2006.

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