Dual Mode Optoelectronic Devices Based on 2D Single Crystalline VO2 Films with Controlled Metallic Domain Regime Induced Variable Hysteresis

Abstract

AbstractThe multimode optoelectronic operation in a single component device is an attractive design strategy for future optoelectronics, which demands unique and complex multifunction. Here, a novel dual‐mode optoelectronic device with both memory and switching functionalities by utilizing alternating metallic stripe domain regime‐induced controllable hysteresis of two dimensional (2D)‐crystalline VO2 films is reported. It is found that the formation and disappearance of tensile strain‐induced metallic stripe domain arrays are susceptible to temperature‐induced thermal energy, allowing controllable hysteresis in electric field‐induced metal‐insulator transition (E‐MIT) by tuning the total region of aligned metallic stripe domains within the VO2 films through current flow‐induced thermal energy. Based on the tunable hysteresis in E‐MIT, the 2D‐crystalline VO2 film‐based device exhibits successful multimode optoelectronic memory and switching operations. The device with a large hysteresis width exhibits high‐performance optoelectronic memory behavior with a high on/off ratio of up to ≈55% and a long retention time over 5000 s response to a light pulse optically triggering MIT. On the other hand, the 2D‐crystalline VO2 film device with a narrow hysteresis width exhibits high performance of photodetection with a responsivity of 316 mA W−1 and response times of ≈1.2 and ≈2 µs at rise and fall, respectively.