Composition dependence of electronic structure and optical properties of Hf1−xSixOy gate dielectrics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3029664
Reference33 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Effect of postdeposition annealing on the thermal stability and structural characteristics of sputtered HfO2 films on Si (100)
3. The structural and interfacial properties of HfO2/Si by the plasma oxidation of sputtered metallic Hf thin films
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