Preparation and performance optimization of HfAlO hybrid gate dielectric thin films driven by solution-Reference-Cited by-同舟云学术

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Preparation and performance optimization of HfAlO hybrid gate dielectric thin films driven by solution

Published:2024-07-07 Issue:2 Volume:111 Page:515-529
ISSN:0928-0707
Container-title:Journal of Sol-Gel Science and Technology
language:en
Short-container-title:J Sol-Gel Sci Technol

Author:

Zhang Renjia,Tuokedaerhan Kamale,Wu Zhaofeng,Du Hongguo,Ibraimov Margulan,Sagidolda Yerulan

Funder

Natural Science Foundation of Xinjiang Uygur Autonomous Region

National Natural Science Foundation of China

Tianshan Innovation Team Program of Xinjiang Uygur Autonomous Region

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s10971-024-06467-w.pdf

Reference40 articles.

1. Agrawal KS, Patil VS, Khairnar AG, Mahajan AM (2016) HfO2 gate dielectric on Ge (111) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment. Appl Surf Sci 364:747–751. https://doi.org/10.1016/j.apsusc.2015.12.218

2. Madia O, Afanas’ev VV, Kittl JA, Hong WK, Kim S-S, Lee H, Kim S, Rodder MS, Stesmans A (2015) Germanium-related deep electron traps in ALD-grown HfO2 insulators studied through exhaustive photodepopulation spectroscopy. Microelectron Eng 147:188–191. https://doi.org/10.1016/j.mee.2015.04.109

3. Bohr M, Chau R, Ghani T, Mistry K (2007) The high-k solution. IEEE Spectr 44:29–35. https://doi.org/10.1109/mspec.2007.4337663

4. Gao J, He G, Xiao D, Jin P, Jiang S, Li W, Liang S, Zhu L (2017) Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks. J Mater Sci Technol 33:901–906. https://doi.org/10.1016/j.jmst.2017.04.021

5. He G, Gao J, Chen H, Cui J, Sun Z, Chen X (2014) Modulating the interface quality and electrical properties of HfTiO/InGaAs gate stack by atomic-layer-deposition-derived Al2O3 passivation layer. ACS Appl Mater Interfaces 6:22013–22025. https://doi.org/10.1021/am506351u

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