Germanium-related deep electron traps in ALD-grown HfO2 insulators studied through Exhaustive PhotoDepopulation Spectroscopy-Reference-Cited by-同舟云学术

Germanium-related deep electron traps in ALD-grown HfO2 insulators studied through Exhaustive PhotoDepopulation Spectroscopy

Published:2015-11 Issue: Volume:147 Page:188-191
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Madia O.,Afanas’ev V.V.,Kittl J.A.,Hong Woong Ki,Kim Sang-Su,Lee HuYong,Kim Sunjung,Rodder M.S.,Stesmans A.

Funder

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Opportunities and challenges for Ge CMOS – Control of interfacing field on Ge is a key (Invited Paper)

2. Nature of interface traps in Ge metal-insulator-semiconductor structures with GeO2 interfacial layers

3. Interface traps and dangling-bond defects in (100)Ge∕HfO2

4. SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices—Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues

5. Electron trapping properties of Ge-implanted SiO2

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