Author:
Toriumi Akira,Tabata Toshiyuki,Hyun Lee Choong,Nishimura Tomonori,Kita Koji,Nagashio Kosuke
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. The Physics of Semiconductor Devices;Sze,1981
2. S.J. Wang, S.J. Lee, F. Gao, N. Wu, C.X. Zhu, J.S. Pan, L.J. Tang, D.L. Kwong, in: Technical Digest of International Electron Device Meeting (IEDM), 2004, pp. 307–310.
3. Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate
4. Fermi-level pinning and charge neutrality level in germanium
5. Growth mechanism difference of sputtered HfO2 on Ge and on Si
Cited by
145 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献