Interface traps and dangling-bond defects in (100)Ge∕HfO2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1947372
Reference18 articles.
1. Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric
2. Electrical characterization of germanium p-channel MOSFETs
3. Growth mechanism difference of sputtered HfO2 on Ge and on Si
4. Energy band alignment at the (100)Ge/HfO2 interface
5. Coadsorption and reaction of NH3 with NO, O and OH on Ge surfaces
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