Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs-Reference-Cited by-同舟云学术

Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs

Published:2024-01 Issue:1 Volume:71 Page:393-399
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kim Seong Kwang¹,Lim Hyeong-Rak¹^ORCID,Jeong Jaejoong¹,Lee Seung Woo¹,Jeong Ho Jin¹,Park Juhyuk¹,Kim Joon Pyo¹,Jeong Jaeyong¹,Kim Bong Ho¹^ORCID,Ahn Seung-Yeop¹,Park Youngkeun¹^ORCID,Geum Dae-Myoung²,Kim Younghyun³^ORCID,Baek Yongku¹,Cho Byung Jin¹,Kim Sanghyeon¹

Affiliation:

1. School of Electrical Engineering, KAIST, Daejeon, South Korea

2. School of Electronics Engineering, Chungbuk National University, Cheongju-si, South Korea

3. Department of Photonics and Nanoelectronics, Hanyang University ERICA, Ansan, South Korea

Funder

National Research Foundation of Korea (NRF) grant through the Korean Government

BK21 FOUR, Korea Basic Science Institute (National research Facilities and Equipment Center) grant through the Ministry of Education

Samsung Electronics Company Ltd

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10382412/10325439.pdf?arnumber=10325439

Reference42 articles.

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