The Role of Interface Defect States in n‐ and p‐Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf 0.5 Zr 0.5 O 2 Ferroelectric-Reference-Cited by-同舟云学术

The Role of Interface Defect States in n‐ and p‐Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf 0.5 Zr 0.5 O 2 Ferroelectric

Published:2021-01-06 Issue:4 Volume:218 Page:2000500
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Boni Georgia Andra¹,Istrate Cosmin M.¹,Zacharaki Christina²³,Tsipas Polychronis²,Chaitoglou Stefanos²,Evangelou Evangelos K.⁴,Dimoulas Athanasios²,Pintilie Ioana¹,Pintilie Lucian¹^ORCID

Affiliation:

1. Laboratory of Multifunctional Materials and Structures National Institute for Materials Physics Bucharest-Magurele 077125 Romania

2. Institute of Nanoscience and Nanotechnology National Centre for Scientific Research “Demokritos” Athens 15310 Greece

3. Department of Physics National and Kapodistrian University of Athens Athens 15772 Greece

4. Department of Physics University of Ioannina Ioannina 45110 Greece

Funder

Horizon 2020 Framework Programme

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000500

Reference31 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Review and perspective on ferroelectric HfO2-based thin films for memory applications

3. Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO 2

4. On the Origin of the Large Remanent Polarization in La:HfO 2

5. Prospective of Semiconductor Memory Devices: from Memory System to Materials

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