Improved Memory Window and Robust Endurance for Ge P-Channel Ferroelectric FET Memory Using Microwave Annealing Followed by Rapid Thermal Annealing-Reference-Cited by-同舟云学术

Improved Memory Window and Robust Endurance for Ge P-Channel Ferroelectric FET Memory Using Microwave Annealing Followed by Rapid Thermal Annealing

Published:2022-12 Issue:12 Volume:43 Page:2073-2076
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Peng Hao-Kai¹^ORCID,Chen Jian-Zhi¹,Wu Yung-Hsien¹^ORCID

Affiliation:

1. Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan

Funder

Ministry of Science and Technology of Taiwan

Materials Analysis Technology Inc.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9965979/09915367.pdf?arnumber=9915367

Reference28 articles.

1. Ultra-low power robust 3bit/cell Hf0.5Zr0.5O2 ferroelectric finFET with high endurance for advanced computing-in-memory technology;de;Proc Symp VLSI Technol,2021

2. The Role of Interface Defect States in n‐ and p‐Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf 0.5 Zr 0.5 O 2 Ferroelectric

3. Reliability aspects of ferroelectric TiN/Hf0.5Zr0.5O2/Ge capacitors grown by plasma assisted atomic oxygen deposition

4. Reduced Asymmetric Memory Window Between Si-Based n- and p-FeFETs With Scaled Ferroelectric HfZrOₓ and AlON Interfacial Layer

5. Re-Examination of Vth Window and Reliability in HfO2 FeFET Based on the Direct Extraction of Spontaneous Polarization and Trap Charge during Memory Operation

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