Performance Optimization for Ferroelectric HfZrO<sub>x</sub> on a Ge Substrate by Modifying the Deposition Temperature-Reference-Cited by-同舟云学术

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Performance Optimization for Ferroelectric HfZrO_x on a Ge Substrate by Modifying the Deposition Temperature

Published:2024 Issue: Volume: Page:1-5
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Lyu Shuxian¹^ORCID,Jiang Pengfei¹^ORCID,Gao Zhaomeng²,Yang Yang¹,Chen Yuanxiang¹,Wang Boping¹,Chen Meiwen¹,Wang Yuan¹^ORCID,Chen Yuting¹,Wang Yan¹^ORCID

Affiliation:

1. Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China

2. Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, China

Funder

Ministry of Science and Technology (MOST) of China

Strategic Priority Research Program of the Chinese Academy of Sciences

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx7/7729/4359107/10339890.pdf?arnumber=10339890

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