Robust 1/<i>f</i> Noise Unaffected by Program/Erase Cycling-Induced Damage in Ferroelectric Schottky Barrier FETs-Reference-Cited by-同舟云学术

Robust 1/f Noise Unaffected by Program/Erase Cycling-Induced Damage in Ferroelectric Schottky Barrier FETs

Published:2024-09 Issue:9 Volume:45 Page:1645-1648
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Shin Wonjun¹^ORCID,Koo Ryun-Han²,Kim Sangwoo³,Kwon Dongseok²^ORCID,Kim Jae-Joon²^ORCID,Kwon Daewoong³,Lee Jong-Ho²^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering and the Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, South Korea

2. Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, South Korea

3. Department of Electronic Engineering, Hanyang University, Seoul, South Korea

Funder

BK21 FOUR program of the Education and Research Program for Future ICT Pioneers

National Research Foundation (NRF) funded by the Korean Ministry of Science and ICT

Samsung Research Funding & Incubation Center of Samsung Electronics

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/55/10648890/10589368.pdf?arnumber=10589368

Reference26 articles.

1. Self‐Curable Synaptic Ferroelectric FET Arrays for Neuromorphic Convolutional Neural Network

2. The future of ferroelectric field-effect transistor technology

3. Synergistic improvement of sensing performance in ferroelectric transistor gas sensors using remnant polarization

4. CMOS-compatible compute-in-memory accelerators based on integrated ferroelectric synaptic arrays for convolution neural networks

5. From Ferroelectric Material Optimization to Neuromorphic Devices