Hf0.5Zr0.5O2-Based Germanium Ferroelectric p-FETs for Nonvolatile Memory Applications
Author:
Affiliation:
1. National Centre for Scientific Research “Demokritos”, 15310 Athens, Greece
2. Department of Physics, National and Kapodistrian University of Athens, 157 84 Athens, Greece
Funder
Horizon 2020 Framework Programme
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00324
Reference23 articles.
1. Ferroelectric field effect transistors: Progress and perspective
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5. HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention
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