Ferroelectric field effect transistors: Progress and perspective-Reference-Cited by-同舟云学术

Ferroelectric field effect transistors: Progress and perspective

Published:2021-02-01 Issue:2 Volume:9 Page:021102
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Kim Jae Young¹^ORCID,Choi Min-Ju¹^ORCID,Jang Ho Won¹²^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea

2. Advanced Institute of Convergence Technology, Seoul National University, Suwon 16229, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0035515

Reference154 articles.

1. Design of DRAM-NAND flash hybrid main memory and Q-learning-based prefetching method

2. Digital selection and analogue amplification coexist in a cortex-inspired silicon circuit

3. Emerging memory devices for artificial synapses

4. A million spiking-neuron integrated circuit with a scalable communication network and interface

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