Wide-Range Threshold Voltage Tunable β-Ga₂O₃FETs With a Sputtered AlScN Ferroelectric Gate Dielectric-Reference-Cited by-同舟云学术

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Wide-Range Threshold Voltage Tunable β-Ga₂O₃FETs With a Sputtered AlScN Ferroelectric Gate Dielectric

Published:2024-09 Issue:9 Volume:45 Page:1558-1561
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yoon Oh Seung¹^ORCID,Kim Seokgi²,Lee Gyuhyung¹,Park Ji-Hyeon³,Jeon Daewoo³,Kim Sungkyu²^ORCID,Yoo Geonwook⁴^ORCID

Affiliation:

1. Department of Intelligent Semiconductor, Soongsil University, Seoul, South Korea

2. Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea

3. Korea Institute of Ceramic Engineering and Technology, Jinju, South Korea

4. Department of Intelligent Semiconductor and the School of Electronic Engineering, Soongsil University, Seoul, South Korea

Funder

Korea Evaluation Institute of Industrial Technology

Korea Institute for Advancement of Technology

Korea Institute of Ceramic Engineering and Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/55/10648890/10589908.pdf?arnumber=10589908

Reference31 articles.

1. Guest Editorial: The dawn of gallium oxide microelectronics

2. A review of Ga2O3materials, processing, and devices

3. Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs

4. Recent progress in Ga2O3power devices

5. Recent progress on the electronic structure, defect, and doping properties of Ga2O3

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