Guest Editorial: The dawn of gallium oxide microelectronics
Author:
Affiliation:
1. National Institute of Information and Communications Technology, Koganei, Tokyo 184–8795, Japan
2. Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433, USA
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5017845
Reference71 articles.
1. Polymorphism of Ga2O3 and the System Ga2O3—H2O
2. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3
3. Deep-ultraviolet transparent conductive β-Ga2O3 thin films
4. First-principles study of the structural, electronic, and optical properties ofGa2O3in its monoclinic and hexagonal phases
5. Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy
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