Analysis of deep level defects in nitrogen post-deposition annealed Ga2O3/SiC hetero-structured Schottky diodes grown by mist-CVD-Reference-Cited by-同舟云学术

Analysis of deep level defects in nitrogen post-deposition annealed Ga2O3/SiC hetero-structured Schottky diodes grown by mist-CVD

Published:2024-09-10 Issue:10 Volume:130 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Lee Tae-Hee,Park Se-Rim,Choi Ji-Soo,Chung Seung-Hwan,Kim Min-Yeong,Lee Geon-Hee,Cho Seong-Ho,Bae Si-Young,Kim Il Ryong,Kim Min Kyu,Lim Byeong Cheol,Schweitz Michael A.,Koo Sang-Mo

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s00339-024-07835-7.pdf

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