Gallium Nitride and Silicon Carbide Power Devices

Author:

Baliga B Jayant1

Affiliation:

1. North Carolina State UniversityUSA

Publisher

WORLD SCIENTIFIC

Cited by 38 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Analysis of deep level defects in nitrogen post-deposition annealed Ga2O3/SiC hetero-structured Schottky diodes grown by mist-CVD;Applied Physics A;2024-09-10

2. Improved HF-FOM and SC Ruggedness of Split-Gate 4H-SiC MOSFET With P+ Buffer;IEEE Electron Device Letters;2024-07

3. High Power-Density Design Based on WBG GaN Devices for Three-Phase Motor Drives;2024 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM);2024-06-19

4. Exploring GaN Semiconductors Power Losses in DAB Converter Simulation via PLECS;2024 IEEE 33rd International Symposium on Industrial Electronics (ISIE);2024-06-18

5. First Demonstration of Optically-Controlled Vertical GaN finFET for Power Applications;IEEE Electron Device Letters;2024-05

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