Roadmap on ferroelectric hafnia- and zirconia-based materials and devices-Reference-Cited by-同舟云学术

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

Published:2023-08-01 Issue:8 Volume:11 Page:
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:

Author:

Silva José P. B.¹²^ORCID,Alcala Ruben³^ORCID,Avci Uygar E.⁴^ORCID,Barrett Nick⁵^ORCID,Bégon-Lours Laura⁶^ORCID,Borg Mattias⁷⁸^ORCID,Byun Seungyong⁹^ORCID,Chang Sou-Chi⁴^ORCID,Cheong Sang-Wook¹⁰^ORCID,Choe Duk-Hyun¹¹^ORCID,Coignus Jean¹²^ORCID,Deshpande Veeresh¹³^ORCID,Dimoulas Athanasios¹⁴^ORCID,Dubourdieu Catherine¹^ORCID,Fina Ignasi¹⁵^ORCID,Funakubo Hiroshi¹⁶^ORCID,Grenouillet Laurent¹²^ORCID,Gruverman Alexei¹⁷^ORCID,Heo Jinseong¹¹^ORCID,Hoffmann Michael¹⁸^ORCID,Hsain H. Alex¹⁹^ORCID,Huang Fei-Ting¹⁰^ORCID,Hwang Cheol Seong⁹^ORCID,Íñiguez Jorge²^ORCID,Jones Jacob L.¹⁹^ORCID,Karpov Ilya V.⁴^ORCID,Kersch Alfred²⁰^ORCID,Kwon Taegyu⁹^ORCID,Lancaster Suzanne³^ORCID,Lederer Maximilian²¹^ORCID,Lee Younghwan²^ORCID,Lomenzo Patrick D.³^ORCID,Martin Lane W.²^ORCID,Martin Simon¹²^ORCID,Migita Shinji²²^ORCID,Mikolajick Thomas²³^ORCID,Noheda Beatriz²³^ORCID,Park Min Hyuk²⁹^ORCID,Rabe Karin M.²⁴^ORCID,Salahuddin Sayeef²³^ORCID,Sánchez Florencio¹⁵^ORCID,Seidel Konrad²¹^ORCID,Shimizu Takao²⁵^ORCID,Shiraishi Takahisa²⁶^ORCID,Slesazeck Stefan³^ORCID,Toriumi Akira²⁷^ORCID,Uchida Hiroshi²⁸^ORCID,Vilquin Bertrand²⁹^ORCID,Xu Xianghan³⁰^ORCID,Ye Kun Hee³⁹^ORCID,Schroeder Uwe³^ORCID

Affiliation:

1. Physics Center of Minho and Porto Universities (CF-UM-UP), Campus de Gualtar, University of Minho 1 , 4710-057 Braga, Portugal

2. Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho 2 , 4710-057 Braga, Portugal

3. NaMLab gGmbH 3 , Noethnitzer Str. 64a, 01187 Dresden, Germany

4. Components Research, Intel Corporation 4 , Hillsboro, Oregon 97124, USA

5. SPEC, CEA, CNRS, CEA Saclay, Université Paris-Saclay 5 , 91191 Gif-sur-Yvette, France

6. IBM Research Zurich 6 , Säumerstrasse 4, 8803 Rüschlikon, Switzerland

7. Electrical and Information Technology, Lund University 7 , Box 118, Lund 22 100, Sweden

8. NanoLund, Lund University 8 , Box 118, Lund 22 100, Sweden

9. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University 9 , Seoul 08826, Republic of Korea

10. Rutgers Center for Emergent Materials and Department of Physics and Astronomy 10 , Piscataway, New Jersey 08854, USA

11. Device Research Center, Samsung Advanced Institute of Technology (SAIT) 11 , Suwon 16678, Republic of Korea

12. CEA, LETI, University Grenoble Alpes 12 , F-38000 Grenoble, France

13. Helmholtz-Zentrum Berlin für Materialien und Energie 13 , Hahn-Meitner-Platz 1, Berlin 14109, Germany

14. National Center for Scientific Research DEMOKRITOS 14 , 15341 Athens, Greece

15. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB 16 , Bellaterra, Barcelona 08193, Spain

16. Department of Materials Science and Engineering, Tokyo Institute of Technology 17 , 226-8502 Yokohama, Japan

17. Department of Physics and Astronomy, University of Nebraska-Lincoln 18 , Lincoln, Nebraska 68588, USA

18. Department of Electrical Engineering and Computer Sciences, University of California 19 , Berkeley, California 94720, USA

19. Department of Materials Science and Engineering, North Carolina State University 20 , Raleigh, North Carolina 27695, USA

20. Department of Applied Sciences and Mechatronics, Munich University of Applied Sciences 23 , Lothstr. 34, D-80335 Munich, Germany

21. Fraunhofer Institute for Photonic Microsystems IPMS, Center Nanoelectronic Technologies (CNT) 24 , 01109 Dresden, Germany

22. National Institute of Advanced Industrial Science and Technology 28 , Kumamoto, Japan

23. CogniGron Center, University of Groningen 30 , Groningen 9747 AG, The Netherlands

24. Department of Physics and Astronomy, Rutgers University 31 , Piscataway, New Jersey 08854, USA

25. Materials Research Center for Element Strategy, Tokyo Institute of Technology 33 , Yokohama 226-8503, Japan

26. Department of Materials Science and Engineering, Tokyo Institute of Technology 34 , Yokohama 226-8502, Japan

27. The University of Tokyo 35 , Tokyo, Japan

28. Department of Materials and Life Sciences, Sophia University 36 , Chiyoda, Tokyo 102-8554, Japan

29. Ecole Centrale de Lyon, INSA Lyon, UCBL, CPE Lyon, CNRS, INL UMR5270, Université de Lyon 37 , 69130 Ecully, France

30. Department of Chemistry, Princeton University 38 , Princeton, New Jersey 08544, USA

Abstract

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2–ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development.

Funder

Luxembourg National Research Fund

Spanish Ministry of Innovation

Severo Ochoa FUNFUTURE

MCIN/AEI

European Union Next/Generation/PRTR

MEXT Initiative

MEXT Program

MEXT KAKENHI

U.S. National Science Foundation

Portuguese Foundation for Science and Technology

M-ERA NET Project