Funder
Russian Science Foundation
Subject
Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science
Reference30 articles.
1. Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications;Zahoor;Nanoscale Res. Lett.,2020
2. Roadmap on ferroelectric hafnia- and zirconia-based materials and devices;Silva;APL Mater.,2023
3. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films;Park;Adv. Mater.,2015
4. Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping;Kozodaev;J. Appl. Phys.,2019
5. Resistive switching performance and synaptic behavior of La-doped HfO2 thin film;Jiang;Thin Solid Films,2023
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