Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films-Reference-Cited by-同舟云学术

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

Published:2015-02-11 Issue:11 Volume:27 Page:1811-1831
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Park Min Hyuk¹²,Lee Young Hwan¹²,Kim Han Joon¹²,Kim Yu Jin¹²,Moon Taehwan¹²,Kim Keum Do¹²,Müller Johannes³,Kersch Alfred⁴,Schroeder Uwe⁵,Mikolajick Thomas⁵,Hwang Cheol Seong¹²

Affiliation:

1. Department of Materials Science and Engineering; Seoul National University; Seoul 151-744 Republic of Korea

2. Inter-university Semiconductor Research Center; College of EngineeringSeoul National University; Seoul 151-744 Republic of Korea

3. Fraunhofer IPMS-CNT; Koenigsbruecker Str. 178 01109 Dresden Germany

4. University of Applied Sciences Munich; Lothstr. 34 80335 Munich Germany

5. NaMLab gGmbH/TU Dresden; Noethnitzer Str. 64 01187 Dresden Germany

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference135 articles.

1. Piezo-Electric and Allied Phenomena in Rochelle Salt

2. Principles and Applications of Ferroelectrics and Related Materials

3. Ferroelectric Memories

4. Giant Electrocaloric Effect in Thin-Film PbZr 0.95 Ti 0.05 O 3

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