Author:
Zhu Xuhao,Ma Yao,Bi Jinshun,Xu Gaobo,He Mu,Mei Fan,Yuan Yihui,Li Shirui,Wang Yulin,Zou Peichun,Zhao Xue
Reference41 articles.
1. Towards the development of flexible non-volatile memories;Han;J. Mater. Sci.,2013
2. Impact of plasma enhanced atomic layer deposited HfO2 buffer layer on the structural, electrical and ferroelectric properties of metal / ferroelectric /insulator / semiconductor gate stack for non-volatile memory applications;Jha;J. Mater. Sci.,2019
3. High-k dielectrics for future generation memory devices;Kittl;Microelectron. Eng.,2009
4. Giant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films;Noh;Phys. Rev. Lett.,2011
5. Reliability properties of low-voltage ferroelectric capacitors and memory arrays;Rodriguez;IEEE Trans. Device Mater. Reliab.,2004