Interfacial-Layer-Free Ge<sub>0.95</sub>Si<sub>0.05</sub> Nanosheet FeFETs-Reference-Cited by-同舟云学术

Interfacial-Layer-Free Ge_0.95Si_0.05 Nanosheet FeFETs

Published:2024-03 Issue:3 Volume:71 Page:1758-1763
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hsieh Wan-Hsuan¹^ORCID,Chen Yu-Rui¹^ORCID,Liu Yi-Chun¹^ORCID,Zhao Zefu¹^ORCID,Lee Jia-Yang²,Tu Chien-Te¹^ORCID,Huang Bo-Wei¹^ORCID,Wang Jer-Fu¹^ORCID,Lee M. H.³^ORCID,Liu C. W.⁴^ORCID

Affiliation:

1. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan

2. Institute and Undergraduate Program of Electro-Optical Engineering, and the Graduate School of Advance Technology, National Taiwan University, Taipei, Taiwan

3. Graduate School of Advance Technology, National Taiwan University, Taipei, Taiwan

4. Department of Electrical Engineering, Graduate Institute of Electronics Engineering, the Graduate Institute of Photonics and Optoelectronics, and the Graduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan

Funder

“Center for Advanced Semiconductor Technology Research” through the Featured Areas Research Center Program within the Framework of the Higher Education Sprout Project

Ministry of Education (MOE) in Taiwan

National Science and Technology Council, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10457976/10418842.pdf?arnumber=10418842

Reference34 articles.

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2. The future of ferroelectric field-effect transistor technology

3. Endurance > 10¹¹ Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO₂ to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM

4. Asymmetric Polarization Response of Electrons and Holes in Si FeFETs: Demonstration of Absolute Polarization Hysteresis Loop and Inversion Hole Density over 2×1013 cm−2

5. Memory Window in Ferroelectric Field-Effect Transistors: Analytical Approach