Endurance > 10<sup>11</sup> Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO<sub>2</sub> to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM-Reference-Cited by-同舟云学术

Endurance > 10¹¹ Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO₂ to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM

Published:2022-06-12 Issue: Volume: Page:
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Container-title:2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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Author:

Liao C.-Y.¹,Hsiang K.-Y.¹,Lou Z. -F.¹,Tseng H.-C.¹,Lin C.-Y.¹,Li Z.-X.¹,Hsieh F.-C.¹,Wang C.-C.¹,Chang F.-S.¹,Ray W.-C.¹,Tseng Y.-Y.²,Chang S. T.³,Chen T.-C.⁴,Lee M. H.¹

Affiliation:

1. National Taiwan Normal University,Institute and Undergraduate Program of Electro-Optical Engineering,Taipei,Taiwan

2. Synopsys Taiwan Co., Ltd.,TCAD Silicon Engineering Group,Hsinchu,Taiwan

3. National Chung Hsing University,Department of Electrical Engineering,Taichung,Taiwan

4. Taiwan Semiconductor Manufacturing Company,Corporate Research,Hsinchu,Taiwan

Funder

Ministry of Science and Technology

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9830116/9830138/09830345.pdf?arnumber=9830345

Reference12 articles.

1. Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors

2. A Silicon Nanowire Ferroelectric Field‐Effect Transistor

3. Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer

4. Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors

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