Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors-Reference-Cited by-同舟云学术

Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors

Published:2017-01-24 Issue:4 Volume:9 Page:3792-3798
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Mulaosmanovic Halid¹^ORCID,Ocker Johannes¹,Müller Stefan¹,Schroeder Uwe¹,Müller Johannes²,Polakowski Patrick²,Flachowsky Stefan³,van Bentum Ralf³,Mikolajick Thomas¹⁴^ORCID,Slesazeck Stefan¹

Affiliation:

1. NaMLab gGmbH, 01187 Dresden, Germany

2. Fraunhofer IPMS-CNT, 01099 Dresden, Germany

3. GLOBALFOUNDRIES, 01109 Dresden, Germany

4. Chair of Nanoelectronic Materials, TU Dresden, 01062 Dresden, Germany

Funder

Freistaat Sachsen

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b13866

Reference43 articles.

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3. Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics

4. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

5. Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

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