Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric-Reference-Cited by-同舟云学术

Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

Published:2016-10 Issue: Volume:124 Page:16-23
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Saeidi A.,Biswas A.,Ionescu Adrian M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference42 articles.

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3. Ferroelectric hafnium oxide based materials and devices: assessment of current status and future prospects;Müller;ECS J Solid State Sci Technol,2015

4. A ferroelectric field effect device;Heyman;Proc IEEE,1966

5. Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si (100) structures;Tokumitsu;IEEE Electron Dev Lett,1997

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