Comprehensive Experiments and Modeling Applicable for Ferroelectric Transistors With an MFMIS Structure and a Wide Range of Area Ratios: Unveiling the Operation Mechanisms-Reference-Cited by-同舟云学术

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Comprehensive Experiments and Modeling Applicable for Ferroelectric Transistors With an MFMIS Structure and a Wide Range of Area Ratios: Unveiling the Operation Mechanisms

Published:2024-09 Issue:9 Volume:71 Page:5332-5338
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Xiaolin¹^ORCID,Sun Chen¹^ORCID,Zheng Zijie¹^ORCID,Jiao Leming¹^ORCID,Zhou Zuopu¹^ORCID,Zhang Dong¹^ORCID,Liu Gan¹^ORCID,Gong Xiao¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore, Queenstown, Singapore

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10608039.pdf?arnumber=10608039

Reference36 articles.

1. First Direct Measurement of Sub-Nanosecond Polarization Switching in Ferroelectric Hafnium Zirconium Oxide

2. A FeFET based super-low-power ultra-fast embedded NVM technology for 22 nm FDSOI and beyond;Dunkel

3. Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory

4. A 28 nm HKMG super low power embedded NVM technology based on ferroelectric FETs;Trentzsch

5. Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery

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