Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer-Reference-Cited by-同舟云学术

Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer

Published:2014-11-10 Issue:19 Volume:105 Page:192903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Han Joon¹,Park Min Hyuk¹,Kim Yu Jin¹,Lee Young Hwan¹,Jeon Woojin¹,Gwon Taehong¹,Moon Taehwan¹,Kim Keum Do¹,Hwang Cheol Seong¹

Affiliation:

1. Department of Materials Science and Engineering, and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, South Korea

Funder

Global Research Laboratory Program

Ministry of Science, ICT and Future Planning (MSIP)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4902072

Reference29 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

3. Ferroelectricity in Simple Binary ZrO2 and HfO2

4. Ferroelectricity in yttrium-doped hafnium oxide

5. Ferroelectricity in Gd-Doped HfO2Thin Films

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