First Demonstration of Thermally Stable Zr:HfO<sub>2</sub> Ferroelectrics via Inserting AlN Interlayer-Reference-Cited by-同舟云学术

First Demonstration of Thermally Stable Zr:HfO₂ Ferroelectrics via Inserting AlN Interlayer

Published:2024-09 Issue:9 Volume:45 Page:1578-1581
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lee Sangmok¹^ORCID,Kim Giuk¹^ORCID,Lee Sangho¹^ORCID,Shin Hunbeom¹^ORCID,Lim Youngjin²,Kim Kang³,Kim Do-Hyung³^ORCID,Oh Il-Kwon²,Ko Park Sang-Hee³^ORCID,Ahn Jinho⁴^ORCID,Jeon Sanghun¹^ORCID

Affiliation:

1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea

2. Division of Electrical and Computer Engineering, Ajou University, Suwon, South Korea

3. School of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea

4. Division of Materials Science and Engineering, Hanyang University, Seoul, South Korea

Funder

Technology Innovation Program

Ministry of Science and ICT

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/55/10648890/10594739.pdf?arnumber=10594739

Reference34 articles.

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4. Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory

5. Novel strategies for low-voltage NAND flash memory with negative capacitance effect