Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristics

Abstract

AbstractFerroelectric memory devices are expected for low-power and high-speed memory applications. HfO2-based ferroelectric is attracting attention for its CMOS-compatibility and high scalability. Mesoscopic-scale grains, of which size is almost comparable to device size, are formed in HfO2-based ferroelectric poly-crystalline thin films, which largely influences electrical characteristics in memory devices. It is important to study the impact of mesoscopic-scale grain formation on the electrical characteristics. In this work, first, we have studied the thickness dependence of the polarization switching kinetics in HfO2-based ferroelectric. While static low-frequency polarization is comparable for different thickness, dynamic polarization switching speed is slower in thin Hf0.5Zr0.5O2 (HZO) capacitors. Based on the analysis using the NLS model and physical characterization, thinner HZO contains smaller grains with orientation non-uniformity and more grain boundaries than thicker HZO, which can impede macroscopic polarization switching. We have also theoretically and experimentally studied the polar-axis alignment of a HfO2-based ferroelectric thin film. While in-plane polar orientation is stable in as-grown HZO, out-of-plane polarization can be dominant by applying electric field, which indicates the transition from in-plane polar to out-of-plane polar orientation in the ferroelectric phase grains. This is confirmed by calculating kinetic pathway using ab-initio calculation.