A Flexible Hf0.5Zr0.5O2 Nonvolatile Memory with High Polarization Based on Mica Substrate-Reference-Cited by-同舟云学术

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A Flexible Hf_0.5Zr_0.5O₂ Nonvolatile Memory with High Polarization Based on Mica Substrate

Published:2024-08-02 Issue: Volume: Page:
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Liu Xingpeng¹²,Wei Chunshu¹^ORCID,Zhang Fabi¹^ORCID,Peng Ying¹^ORCID,Sun Tangyou¹^ORCID,Peng Yiming¹,Tang Huiping¹,Yang Junfeng²,Ding Mingjian²,Jiang Chunsheng³,Li Haiou¹^ORCID

Affiliation:

1. Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China

2. Aurora Technologies Co., Ltd., Guangzhou 511453, China

3. Guangxi Key Laboratory of Brain-inspired Computing and Intelligent Chips, School of Electronic and Information Engineering, Guangxi Normal University, Guilin 541004, China

Funder

Natural Science Foundation of Guangxi Zhuang Autonomous Region

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c01108

Reference52 articles.

1. Flexible Ferroelectric Devices: Status and Applications

2. Flexible strategy of epitaxial oxide thin films

3. Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications

4. Stress-Memorized HZO for High-Performance Ferroelectric Field-Effect Memtransistor

5. Stabilizing the ferroelectric phase in doped hafnium oxide

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