Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications-Reference-Cited by-同舟云学术

Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications

Published:2018 Issue:33 Volume:10 Page:15826-15833
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Chen Lin¹²³⁴⁵^ORCID,Wang Tian-Yu¹²³⁴⁵,Dai Ya-Wei¹²³⁴⁵,Cha Ming-Yang¹²³⁴⁵,Zhu Hao¹²³⁴⁵,Sun Qing-Qing¹²³⁴⁵,Ding Shi-Jin¹²³⁴⁵,Zhou Peng¹²³⁴⁵,Chua Leon⁶⁷⁸⁹,Zhang David Wei¹²³⁴⁵

Affiliation:

1. State Key Laboratory of ASIC and System

2. School of Microelectronics

3. Fudan University

4. Shanghai 200433

5. China

6. Department of Electrical Engineering and Computer Sciences

7. University of California

8. Berkeley

9. USA

Abstract

Brain-inspired neuromorphic computing has shown great promise beyond the conventional Boolean logic.

Funder

National Natural Science Foundation of China

Shanghai Educational Development Foundation

Shanghai Municipal Education Commission

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR04734K

Reference38 articles.

1. Synaptic electronics: materials, devices and applications

2. State-dependent computations: spatiotemporal processing in cortical networks

3. Synaptic Metaplasticity Realized in Oxide Memristive Devices

Cited by 183 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf_0.5Zr_0.5O₂ Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer;Advanced Electronic Materials;2024-09-08

2. Recent advances in the mechanism, properties, and applications of hafnia ferroelectric tunnel junctions;Journal of Physics D: Applied Physics;2024-08-29

3. HfAlOx-based ferroelectric memristor for nociceptor and synapse functions;The Journal of Chemical Physics;2024-08-26

4. Enhanced polarization and endurance properties of ZrO₂-based ferroelectric capacitor using HfO₂ interfacial layer;Nanotechnology;2024-08-06

5. A Flexible Hf_0.5Zr_0.5O₂ Nonvolatile Memory with High Polarization Based on Mica Substrate;ACS Applied Electronic Materials;2024-08-02