Optimization of the 4 nm-Thick Hf1–xZrxO2 Film with Low Operating Voltage and High Endurance for Ferroelectric Random Access Memory-Reference-Cited by-同舟云学术

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Optimization of the 4 nm-Thick Hf_1–xZr_xO₂ Film with Low Operating Voltage and High Endurance for Ferroelectric Random Access Memory

Published:2024-09-12 Issue: Volume: Page:
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Park Han Sol¹,Choi Seungheon¹,Kim Kyung Do¹,Yeom Min Kyu¹,Lee Suk Hyun¹,Ryoo Seung Kyu¹,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea

Funder

Korea Evaluation Institute of Industrial Technology

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c01216

Reference32 articles.

1. Ferroelectric Random Access Memories

2. FeRAM technology for high density applications

3. Ferroelectricity in hafnium oxide thin films

4. Review and perspective on ferroelectric HfO2-based thin films for memory applications

5. The fundamentals and applications of ferroelectric HfO2

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