Vertical Ferroelectric HfO<inf>2</inf> FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory-Reference-Cited by-同舟云学术

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Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory

Published:2018-12 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Electron Devices Meeting (IEDM)
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Author:

Florent K.,Pesic M.,Subirats A.,Banerjee K.,Lavizzari S.,Arreghini A.,Di Piazza L.,Potoms G.,Sebaai F.,McMitchell S. R. C.,Popovici M.,Groeseneken G.,Van Houdt J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8601505/8614478/08614710.pdf?arnumber=8614710

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