Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf₀.₅Zr₀.₅O₂ Ferroelectric Memory Arrays-Reference-Cited by-同舟云学术

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Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf₀.₅Zr₀.₅O₂ Ferroelectric Memory Arrays

Published:2024-06 Issue:6 Volume:71 Page:3645-3650
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Guo Shuming¹,Yu Jiajie¹,Wang Hao²,Jin Xingcheng²^ORCID,Li Hongbo²,Wu Chao¹,Chen Lin³^ORCID,Lin Yinyin¹^ORCID,Wei Zhang David¹

Affiliation:

1. School of Microelectronics, Fudan University, Shanghai, China

2. Design Service Engineering Center CSMC Technologies Corporation, Wuxi, China

3. State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Fudan University, Shanghai, China

Funder

National Key Research and Development Program of China

Science and Technology Commission of Shanghai Municipality

Jiashan Fudan Institute

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10538150/10521596.pdf?arnumber=10521596

Reference52 articles.

1. Memory leads the way to better computing

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. A 9Mb HZO-Based Embedded FeRAM with 10¹²-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier

4. Resistive switching materials for information processing

5. Phase-change materials for rewriteable data storage

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