A 9Mb HZO-Based Embedded FeRAM with 10<sup>12</sup>-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier-Reference-Cited by-同舟云学术

A 9Mb HZO-Based Embedded FeRAM with 10¹²-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier

Published:2023-02-19 Issue: Volume: Page:
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Container-title:2023 IEEE International Solid- State Circuits Conference (ISSCC)
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Author:

Yang Jianguo¹,Luo Qing¹,Xue Xiaoyong²,Jiang Haijun³,Wu Qiqiao²,Han Zhongze¹,Cao Yue³,Han Yongkang³,Dou Chunmeng¹,Lv Hangbing¹,Liu Qi²,LiU Ming¹

Affiliation:

1. Institute of Microelectronics of the Chinese Academy of Sciences,Beijing,China

2. Fudan University,Shanghai,China

3. Zhejiang Lab,Hangzhou,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10067248/10067251/10067752.pdf?arnumber=10067752

Reference6 articles.

1. SoC Compatible 1T1C FeRAM Memory Array Based on Ferroelectric Hf0.5Zr0.5O2

2. 16kbit Hf02:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility;francois;IEDM,2021

3. A 20ns-write 45ns-read and 1014-cycle endurance memory module composed of 60nm crystalline oxide semiconductor transistors

4. A low-voltage 1Mb FeRAM in 0.13?m CMOS featuring time-to-digital sensing for expanded operating margin in scaled CMOS;qazi;ISSCC,2011

5. A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference;chih;ISSCC,2020

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