A 20ns-write 45ns-read and 1014-cycle endurance memory module composed of 60nm crystalline oxide semiconductor transistors-Reference-Cited by-同舟云学术

A 20ns-write 45ns-read and 1014-cycle endurance memory module composed of 60nm crystalline oxide semiconductor transistors

Published:2018-02 Issue: Volume: Page:
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Container-title:2018 IEEE International Solid - State Circuits Conference - (ISSCC)
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Author:

Maeda Shuhei,Ohshita Satoru,Furutani Kazuma,Yakubo Yuto,Ishizu Takahiko,Atsumi Tomoaki,Ando Yoshinori,Matsubayashi Daisuke,Kato Kiyoshi,Okuda Takashi,Fujita Masahiro,Yamazaki Shunpei

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8304413/8310156/08310395.pdf?arnumber=8310395

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