Asymmetric Polarization Response of Electrons and Holes in Si FeFETs: Demonstration of Absolute Polarization Hysteresis Loop and Inversion Hole Density over 2×1013 cm−2-Reference-Cited by-同舟云学术

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Asymmetric Polarization Response of Electrons and Holes in Si FeFETs: Demonstration of Absolute Polarization Hysteresis Loop and Inversion Hole Density over 2×1013 cm−2

Published:2020-06 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE Symposium on VLSI Technology
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Author:

Toprasertpong K.,Lin Z. Y.,Lee T. E.,Takenaka M.,Takagi S.

Funder

JSPS

JST

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9264988/9264985/09265015.pdf?arnumber=9265015

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field-Effect Transistors;IEEE Transactions on Electron Devices;2024-08

2. Understanding HZO Thickness Scaling in Si FeFETs: Low Operating Voltage, Fast Wake-Up, and Suppressed Charge Trapping;IEEE Transactions on Electron Devices;2024-06

3. Interfacial-Layer-Free Ge_0.95Si_0.05 Nanosheet FeFETs;IEEE Transactions on Electron Devices;2024-03

4. Understanding memory window of ferroelectric field-effect transistor under coexistence of charge trapping and ferroelectric polarization: violation of linear superposition;Japanese Journal of Applied Physics;2024-01-10

5. Charge trapping effect at the interface of ferroelectric/interlayer in the ferroelectric field effect transistor gate stack;Chinese Physics B;2023-07-01

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