Developing fatigue-resistant ferroelectrics using interlayer sliding switching-Reference-Cited by-同舟云学术

Developing fatigue-resistant ferroelectrics using interlayer sliding switching

Published:2024-07-05 Issue:6704 Volume:385 Page:57-62
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Bian Renji¹²^ORCID,He Ri³^ORCID,Pan Er¹^ORCID,Li Zefen¹^ORCID,Cao Guiming⁴⁵,Meng Peng¹,Chen Jiangang¹^ORCID,Liu Qing¹^ORCID,Zhong Zhicheng³⁶⁷^ORCID,Li Wenwu⁸⁹^ORCID,Liu Fucai¹²¹⁰^ORCID

Affiliation:

1. School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.

2. Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.

3. Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.

4. School of Information Science and Technology, Xi Chang University, Xi Chang 615013, China.

5. Key Laboratory of Liangshan Agriculture Digital Transformation of Sichuan Provincial Education Department, Xi Chang University, Xi Chang 615013, China.

6. Department of Physics, University of Science and Technology of China, Hefei 230026, China.

7. Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, China.

8. Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China.

9. State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai 200433, China.

10. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.

Abstract

Ferroelectric materials have switchable electrical polarization that is appealing for high-density nonvolatile memories. However, inevitable fatigue hinders practical applications of these materials. Fatigue-free ferroelectric switching could dramatically improve the endurance of such devices. We report a fatigue-free ferroelectric system based on the sliding ferroelectricity of bilayer 3R molybdenum disulfide (3R-MoS 2 ). The memory performance of this ferroelectric device does not show the wake-up effect at low cycles or a substantial fatigue effect after 10 6 switching cycles under different pulse widths. The total stress time of the device under an electric field is up to 10 5 s, which is long relative to other devices. Our theoretical calculations reveal that the fatigue-free feature of sliding ferroelectricity is due to the immobile charge defects in sliding ferroelectricity.

Publisher

American Association for the Advancement of Science (AAAS)

Link

https://www.science.org/doi/pdf/10.1126/science.ado1744

Reference71 articles.

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