A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs-Reference-Cited by-同舟云学术

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A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

Published:2016-12 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE International Electron Devices Meeting (IEDM)
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Author:

Trentzsch M.¹,Flachowsky S.¹,Richter R.¹,Paul J.¹,Reimer B.¹,Utess D.¹,Jansen S.¹,Mulaosmanovic H.²,Muller S.²,Slesazeck S.²,Ocker J.²,Noack M.²,Muller J.³,Polakowski P.³,Schreiter J.⁴,Beyer S.¹,Mikolajick T.²,Rice B.¹

Affiliation:

1. GLOBALFOUNDRIES Fab1 LLC & Co. KG, Dresden, Germany

2. NaMLab gGmbH, Dresden, Germany

3. Fraunhofer IPMS, Dresden, Germany

4. RacyICs GmbH, Dresden, Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7824662/7838021/07838397.pdf?arnumber=7838397

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