Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO 2-Reference-Cited by-同舟云学术

Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO 2

Published:2018-03-24 Issue:4 Volume:4 Page:1700489
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Park Min Hyuk¹^ORCID,Chung Ching‐Chang²,Schenk Tony¹,Richter Claudia¹,Hoffmann Michael¹,Wirth Steffen³,Jones Jacob L.²,Mikolajick Thomas¹⁴,Schroeder Uwe¹^ORCID

Affiliation:

1. NaMLab gGmbH Noethnitzer Str. 64 01187 Dresden Germany

2. Department of Materials Science and Engineering North Carolina State University Raleigh NC 27695‐7907 USA

3. Max‐Planck‐Institute for Chemical Physics of Solids Noethnitzer Str. 40 01187 Dresden Germany

4. Chair of Nanoelectronic Materials TU Dresden 01062 Dresden Germany

Funder

Army Research Office

Deutsche Forschungsgemeinschaft

Alexander von Humboldt-Stiftung

National Research Foundation of Korea

National Science Foundation

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201700489

Reference68 articles.

1. Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors

2. Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors

3. Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

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