Funder
Universität Stuttgart
Science and Engineering Research Board
Reference38 articles.
1. Ferroelectricity in hafnium oxide thin films;Böscke;Appl Phys Lett,2011
2. Ferroelectric field-effect transistors based on HfO2: A review;Mulaosmanovic;Nanotechnology,2021
3. Demonstration of multiply-accumulate operation with 28 nm FeFET crossbar array;De;IEEE Electron Device Lett,2022
4. Soliman T, Müller F, Kirchner T, Hoffmann T, Ganem H, Karimov E, et al. Ultra-low power flexible precision FeFET Based analog in-memory computing. In: 2020 IEEE international electron devices meeting. 2020, p. 29.2.1–4.
5. Efficient implementation of max-pooling algorithm exploiting history-effect in ferroelectric-FinFETs;Rafiq;IEEE Trans Electron Devices,2022