Demonstration of Multiply-Accumulate Operation With 28 nm FeFET Crossbar Array-Reference-Cited by-同舟云学术

Demonstration of Multiply-Accumulate Operation With 28 nm FeFET Crossbar Array

Published:2022-12 Issue:12 Volume:43 Page:2081-2084
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

De Sourav¹^ORCID,Muller Franz¹^ORCID,Laleni Nellie¹,Lederer Maximilian¹^ORCID,Raffel Yannick¹^ORCID,Mojumder Shaown¹,Vardar Alptekin¹,Abdulazhanov Sukhrob¹^ORCID,Ali Tarek²,Dunkel Stefan²,Beyer Sven¹,Seidel Konrad¹,Kampfe Thomas¹^ORCID

Affiliation:

1. Center Nanoelectronic Technologies, Fraunhofer IPMS, Dresden, Germany

2. GlobalFoundries, Dresden, Germany

Funder

European Union’s Electronic Components and Systems for European Leadership (ECSEL) Joint Undertaking Project TEMPO and ANDANTE

German [Bundesministerium für Wirtschaft und Klimaschutz (BMWK)]

State of Saxony in the Frame of the Important Project of Common European Interest

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9965979/09927401.pdf?arnumber=9927401

Reference22 articles.

1. Fundamental Understanding and Control of Device-to-Device Variation in Deeply Scaled Ferroelectric FETs

2. Variability Study of Ferroelectric Field-Effect Transistors Towards 7nm Technology Node

3. Influence of microstructure on the variability and current percolation paths in ferroelectric hafnium oxide based neuromorphic FeFET synapses;lederer;Proc Silicon Nanoelectronics Workshop (SNW),2021

4. Superior immunity to trapped-charge induced variability in 2D FeFET NVMs;liu;Proc Silicon Nanoelectronics Workshop (SNW),2021

5. 2-Bit/Cell Operation of Hf0.5Zr0.5O2 Based FeFET Memory Devices for NAND Applications

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In Situ Modulation of Oxygen Vacancy Concentration in Hf0.5Zr0.5O2−x Thin Films and the Mechanism of Its Impact on Ferroelectricity;Coatings;2024-09-02

2. Temperature- and variability-aware compact modeling of ferroelectric FDSOI FET for memory and emerging applications;Solid-State Electronics;2024-08

3. Towards wake-up free ferroelectrics and scaling: Al-doped HZO and its crystallographic texture;Memories - Materials, Devices, Circuits and Systems;2024-08

4. Harnessing ferroic ordering in thin film devices for analog memory and neuromorphic computing applications down to deep cryogenic temperatures;Frontiers in Nanotechnology;2024-05-15

5. Integration of ferroelectric devices for advanced in-memory computing concepts;Japanese Journal of Applied Physics;2024-05-01