2-Bit/Cell Operation of Hf0.5Zr0.5O2 Based FeFET Memory Devices for NAND Applications-Reference-Cited by-同舟云学术

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2-Bit/Cell Operation of Hf0.5Zr0.5O2 Based FeFET Memory Devices for NAND Applications

Published:2019 Issue: Volume:7 Page:551-556
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Zeng Binjian^ORCID,Liao Min^ORCID,Peng Qiangxiang^ORCID,Xiao Wenwu^ORCID,Liao Jiajia^ORCID,Zheng Shuaizhi^ORCID,Zhou Yichun

Funder

National Natural Science Foundation of China

“Huxiang Young Talents Plan” Project of Hunan Province

Science and Technology Innovation Project of Hunan Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/8656606/08704312.pdf?arnumber=8704312

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4. High-Performance Ferroelectric Thin Film Transistors with Large Memory Window Using Epitaxial Yttrium-Doped Hafnium Zirconium Gate Oxide;ACS Applied Materials & Interfaces;2024-04-02

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