Multi-level storage in cleaved-gate ferroelectric FETs investigated by 3D phase-field-based quantum transport simulation
Author:
Funder
Ministry of Science, ICT and Future Planning
National Research Foundation of Korea
Samsung
Publisher
Elsevier BV
Reference13 articles.
1. Ferroelectric field-effect transistors based on HfO2: a review;Mulaosmanovic;Nanotechnology,2021
2. The future of ferroelectric field-effect transistor technology;Khan;Nature Electron,2020
3. 2-bit/cell operation of Hf0.5Zr0.5O2 based FeFET memory devices for NAND applications;Zeng;IEEE J Electron Dev Soc,2019
4. Multibit ferroelectric FET based on nonidentical double HfZrO2 for high-density nonvolatile memory;Liao;IEEE Electron Device Lett,2021
5. Split-gate FeFET (SG-FeFET) with dynamic memory window modulation for non-volatile memory and neuromorphic applications;Hu,2019
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