Laminated Ferroelectric FET With Large Memory Window and High Reliability-Reference-Cited by-同舟云学术

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Laminated Ferroelectric FET With Large Memory Window and High Reliability

Published:2024-04 Issue:4 Volume:71 Page:2411-2416
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lee Hyun Jae¹^ORCID,Nam Seunggeol¹^ORCID,Lee Yunseong¹,Kim Kihong¹,Choe Duk-Hyun¹,Yoo Sijung¹^ORCID,Park Yoonsang¹,Jo Sanghyun¹^ORCID,Kim Donghoon¹^ORCID,Heo Jinseong¹^ORCID

Affiliation:

1. Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, South Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10482422/10466617.pdf?arnumber=10466617

Reference26 articles.

1. Ferroelectric FETs With 20-nm-Thick HfO2Layer for Large Memory Window and High Performance

2. Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles

3. Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors

4. 2-Bit/Cell Operation of Hf0.5Zr0.5O2 Based FeFET Memory Devices for NAND Applications

5. Enabling large memory window and high reliability for FeFET memory by integrating AlON interfacial layer

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO₂;IEEE Transactions on Electron Devices;2024-08

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