Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors
Author:
Affiliation:
1. NaMLab gGmbH, Dresden, Germany
2. Texas Instruments, Dallas, TX, USA
3. Fraunhofer CNT, Dresden, Germany
4. NaMLab gGmbH
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/55/6276318/06248158.pdf?arnumber=6248158
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